Global Foundries || Intern || Semiconductors

Eligibility : B.E./B.Tech. with 0-4 years or M.S./M.Tech. with 0-2 years of relevant experience in Electrical/ Electronics Engineering or Applied Physics ||
Candidates with hands on experience on electrical characterizations and related data ||
Basic understanding of semiconductor IC manufacturing processes with their impact on ||

Roles & Responsibilities

Production Sustaining: Monitoring electrical performance tends, disposition of holds at

electrical and sort test, support general/urgent fab operational issues, scrap investigation,

analysis for process change review boards

Candidate will drive yield enhancement for multiple products by analyzing failing

electrical parameters and rapidly data mining to investigate root causes and containing

excursions and protecting supply

Develop and improve yield characterization and data analysis methodologies to rapidly

determine yield limiters, correlation to in-line defectivity and metrology, and electrical

parametric signals

Support process module engineering activities through electrical test, inline metrology,

and yield analysis to improve cost, cycle-time, and manufacturing robustness

Clear reporting and communication of issues to home teams on a daily basis
Must be flexible in job assignment and ready to work on weekend shifts on a rotational

basis as required by the business

Required Qualifications

B.E./B.Tech. with 0-4 years or M.S./M.Tech. with 0-2 years of relevant experience in

Electrical/ Electronics Engineering or Applied Physics

submicron FET architectures

Strong interpersonal skills and ability to work effectively within a globally matrixed team

or environment

Organized, proactive, excellent analytical skills, on-time delivery of work assigned, and

good verbal and written communication

Preferred Qualifications

Candidates with hands on experience on electrical characterizations and related data

analysis are preferred

Basic understanding of semiconductor IC manufacturing processes with their impact on

electrical parameters is preferred